发明名称 FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE, FERROELECTRIC THIN-FILM ELEMENT, AND MANUFACTURING METHOD OF FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE
摘要 The purpose of the present invention is to provide a niobic acid-based ferroelectric thin-film laminate substrate which can reduce costs while maintaining performance and characteristics as a thin-film element, and to provide a ferroelectric thin-film element cut out from said laminate substrate. This ferroelectric thin-film laminate substrate comprises, laminated in order on a substrate, a lower electrode layer, a ferroelectric thin-film layer, an upper electrode intermediate layer and an upper electrode layer, and is characterized in that the lower electrode layer comprises Pt or a Pt alloy, the ferroelectric thin-film layer comprises (K1-xNax)NbO3 (0.4 ≦ x ≦ 0.7), the upper electrode layer comprises Al or an Al alloy, the upper electrode intermediate layer comprises a metal which is less prone to oxidation than Ti and which can produce an intermetallic compound with Al, and part of the upper electrode intermediate layer and part of the upper electrode layer are alloyed.
申请公布号 WO2016152419(A1) 申请公布日期 2016.09.29
申请号 WO2016JP56420 申请日期 2016.03.02
申请人 SUMITOMO CHEMICAL COMPANY, LIMITED 发明人 HORIKIRI Fumimasa;SHIBATA Kenji;WATANABE Kazutoshi;SUENAGA Kazufumi;ENDO Hiroyuki
分类号 H01L41/047;C01G33/00;H01L21/8246;H01L27/105;H01L37/02;H01L41/187;H01L41/29 主分类号 H01L41/047
代理机构 代理人
主权项
地址