| 摘要 |
A CMOS image sensor and a method for fabricating the same are disclosed, in which a dead zone and a dark current are simultaneously reduced by selective epitaxial growth. The CMOS image sensor includes a first conductive type semiconductor substrate, a second conductive type impurity ion area, a gate electrode, an insulating film formed on an entire surface of the semiconductor substrate including the gate electrode and excluding the second conductive type impurity ion area, and a silicon epitaxial layer formed on the second conductive type impurity ion area and doped with first conductive type impurity ions.
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