发明名称 Transparent conductive film and touch panel therewith
摘要 A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.
申请公布号 US9475235(B2) 申请公布日期 2016.10.25
申请号 US201314052398 申请日期 2013.10.11
申请人 NITTO DENKO CORPORATION 发明人 Haishi Motoki;Nashiki Tomotake;Noguchi Tomonori;Asahara Yoshifumi
分类号 B32B7/02;B32B9/04;G06F3/041;H01L27/14;B29C71/02;C23C14/08;C23C14/58;G06F3/044;G06F3/045 主分类号 B32B7/02
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A transparent conductive film, comprising: a transparent film substrate; and a transparent conductive laminate that is provided on at least one surface of the transparent film substrate and comprises a first transparent conductive layer having a first thickness of 1 to 17 nm and a second transparent conductive layer having a second thickness of 9 to 34 nm, wherein the first transparent conductive layer is a first crystalline layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, a first content of the tetravalent metal element oxide of the first transparent conductive layer is more than 0% by weight and not more than 6% by weight, the second transparent conductive layer is a second crystalline layer comprising an indium-based complex oxide having a tetravalent metal element oxide, and located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than the first content, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the second transparent conductive layer directly contacts the substrate and the first transparent conductive layer directly contacts the opposite surface of the second transparent conductive layer.
地址 Ibaraki-shi JP