WRITE VOLTAGE GENERATION CIRCUIT AND MEMORY DEVICE

摘要

PURPOSE: To provide a write voltage generation circuit and memory device that enable high-speed writing of data to a memory cell without causing an increase in device scale.CONSTITUTION: A write voltage generation circuit includes: a power supply terminal that receives an external power supply voltage; a step-up circuit that generates a step-up voltage by stepping up an external power supply voltage; and a selector that selects either the external power supply voltage or step-up voltage, and outputs the selected voltage as a write voltage. The selector selects the external power supply voltage as the write voltage in the first-half of a write period in which data is written to a memory cell, and selects the step-up voltage as the write voltage in the second-half.SELECTED DRAWING: Figure 3