发明名称 HIGH FREQUENCY INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE: To obtain a high frequency integrated circuit device for mobile communication, e.g. portable telephone, which can be constituted even of a circuit consuming high power because of low. thermal resistance while reducing the size and the labor required for manufacture. CONSTITUTION: A chip device 3 is arranged on the surface of a multilayer ceramic board 2 having a recess 12 in which a semiconductor chip 1 is set. The wiring pattern of bias circuit and high frequency matching circuit requiring low resistance is widened and three-dimensional circuit structure is formed on the surface layer or inner layer of the multilayer ceramic board 2. In such high frequency integrated circuit device, the semiconductor chip 1 being set in the recess is connected with an intermediate plane in the recess through a connecting means, i.e., a wire, and a potting resin 7 for covering them is placed in the recess 12 without bulging outward from the surface of the multilayer ceramic board 2. A protective coat material 16 is applied onto the chip device 3.</p>
申请公布号 JPH08321567(A) 申请公布日期 1996.12.03
申请号 JP19960062368 申请日期 1996.03.19
申请人 MATSUSHITA ELECTRON CORP 发明人 YOSHIKAWA NORIYUKI;KANAZAWA KUNIHIKO;MAKIOKA TOSHIFUMI;TATSUOKA KAZUKI
分类号 H01L23/29;H01L21/52;H01L23/12;H01L23/31;H01L25/00;H01L25/04;H01L25/18;H05K1/03;H05K3/46;(IPC1-7):H01L23/12 主分类号 H01L23/29
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