Semiconductor light-emitting device

摘要

A semiconductor light-emitting device has side surfaces 16 (surfaces not parallel to the epitaxial layers) which are formed at preferred angles # relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. The device comprises a multilayer heterostructure 10 sandwiched between window layers which are provided with contacts 14,15. The side surfaces 16 may be coated with a reflective or anti reflective film and the device may have the shape of a truncated pyramid or cone.