| 摘要 |
PURPOSE:To obtain the resist mask which improves the selection ratio to a material to be etched and enables fine processing with high accuracy by enhancing the etching resistance of a mask material at the time of dry etching a hardly processable material, the resin compsn. to form the mask and the fine working method by dry etching using the mask. CONSTITUTION:The resist mask resin compsn. 2 for dry etching is formed as the resin compsn. consisting essentially of the resin compsn. prepd. by mixing a carbon packing material with a matrix polymer having an arom. group within the molecule (main chain or side chain) and is used as the resist mask material having the high dry etching resistance. The resist mask contg. the carbon packing material has the remarkably improved resistance to the dry etching of rare gaseous ions, such as argon and xenon and enables the fine working with the high-accuracy dry etching. |
