QUARTZ GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME

摘要

The inner surface of a quartz glass crucible is crystallized, without adding any impurity, during the period in which a silicon single crystal is pulled up, whereby the deterioration of the inner surface of the crucible can be inhibited while preventing any impurity causative of crystal defects from coming into the single crystal. This crucible is effective in heightening the degree of conversion into a single crystal and is suitable for improving crucible productivity and the quality of silicon single crystals. The crucible is characterized by comprising a crucible base (3) which is a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on the inner wall of the base (3) and by having been constituted so that that part of the inner crucible surface which is surrounded by a brown ring is evenly crystallized during the period in which a silicon single crystal is pulled up.