| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for detecting the end-point of CMP(chemical- mechanical polishing), which uses an index representing more precise conditions of the polish surface of a polished wafer. SOLUTION: This method includes the steps of using a color discrimination sensor, wherein a light is projected from a light source and its reflection light is condensed into an optical fiber for recognizing the color component of the light, the color components of a traced material on a wafer to be polished are recognized by a color discrimination sensor in advance, on-state is displayed when that color component is recognized, while off-state is displayed when that is not recognized, one point on the surface of a rotating wafer (except for a center point) is irradiated with a light from the digital color sensor, 'on' and 'off' during polishing wafer for each specified time is displayed digitally with a horizontal axis as a time scale, an integrated value (Σm) at a specified time of digitally displayed 'off' pulse width is detected, and a time when the detected integrated value (Σm) agrees with an integrated value (Σn) at a specified time of 'off' pulse width representing an optimum wafer polish end-point which is recorded in advance is taken as wafer's polish end-point. |
