| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor of a semiconductor element for reducing manufacturing cost and for simplifying a process when using a ferroelectric substance as a direction film, and using a noble metal such as platinum as the material for the lower electrode of the capacitor. SOLUTION: The capacitor for a semiconductor element is manufactured using an interlayer insulating film 202 having a contact hole 203 on a semiconductor substrate 200, and a conductive plug 204 is formed in the contact hole 203, and a trench 207 and a first conductive film 208 are physically formed in the periphery of the conductive plug 204, and the first conductive film 208 is etched down to the bottom face of the trench 207 to expose. Then, a first conductive film pattern 208' is formed on the sidewall of the trench 207 and the upper face of the interlayer insulating film 202, and a dielectric film 209 and a second conductive film 210 are formed on the surface of the first conductive film pattern 208'. |
