| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gate structure having an intermediate structure which is capable of reducing a gate contact resistance and a sheet resistance at the same time, as well as to provide a semiconductor device having such a gate structure and a manufacturing method for the gate structure and the semiconductor device. <P>SOLUTION: The semiconductor device includes a substrate 21 having a top-side face and a bottom-side face as well as a gate structure which is formed near the top-side face of the substrate 21 and includes a gate insulating film 22, a first electrode 23 formed on the gate insulating film 22, an intermediate structure 24 formed on the first electrode 23 and a second electrode 25 formed on the intermediate structure 24. The intermediate structure 24 has a first Ti-film 101 containing titanium (Ti) and a second W-film 24D which contains tungsten and silicon and is formed on the first Ti-film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
