| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for programming a phase-change substance suitably used for a storage device. SOLUTION: The method for programming a phase-change substance includes the steps of: providing a phase-change substance having a plurality of resistance states including a set resistance state having set resistance, a reset resistance state having reset resistance, and a plurality of intermediate resistance states having resistance lower than the reset resistance; defining the first memory state of the phase-change substance including the first intermediate resistance state of the phase-change substance having first resistance; defining the second memory state of the phase-change substance including the second intermediate resistance state of the phase-change substance having second resistance higher than the first resistance; and programming the phase-change substance to one of the first and second memory states. The programming step relates to the method of applying first and second programming signals to the phase-change substance. COPYRIGHT: (C)2009,JPO&INPIT |
