| 摘要 |
<p>An active matrix substrate of the present invention is arranged so that each pixel area (10) has: first and second transistors (12a, 12b); a first capacity electrode (17a) which is connected to the first transistor and is able to function as an electrode of a first capacity; and a second capacity electrode (17b) which is connected to the second transistor and is able to function as an electrode of a second capacity. The active matrix substrate includes: a first conductor (52a) which is provided in a layer below the first capacity electrode and is able to function as the other electrode of the first capacity; and a second conductor (52b) which is provided in a layer below the second capacity electrode and is able to function as the other electrode of the second capacity. Gate insulating films (40), covering gate electrodes of the transistors and the conductors, are provided with a first thin section (31a) with reduced thickness in a first on-conductor area overlapping the first conductor and with a second thin section (31b) with reduced thickness in a second on-conductor area overlapping the second conductor. At least a part of the first thin section overlaps the first capacity electrode, at least a part of the second thin section overlapping the second capacity electrode.</p> |
