发明名称 Method of manufacturing magneto-resistive device and apparatus for manufacturing the same
摘要 <p>A method of manufacturing a magneto-resistive device on a substrate, the device having a high MR ratio even with a low RA, and an apparatus for manufacturing the same are provided. The magneto-resistive device having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber (21) with the substrate (12) being at a floating potential.</p>
申请公布号 EP2037512(A1) 申请公布日期 2009.03.18
申请号 EP20080168830 申请日期 2007.02.26
申请人 CANON ANELVA CORPORATION 发明人 NAGAMINE, YOSHINORI;TSUNEKAWA, KOJI;DJAYAPRAWIRA, DAVID DJULIANTO;MAEHARA, HIROKI
分类号 H01L43/12;C23C14/08;C23C14/34;H01J37/34 主分类号 H01L43/12
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