发明名称 Boosted supply voltage generator for a memory device and method therefore
摘要 A boosted supply voltage generator is selectively activated and deactivated to allow operations that are sensitive to variations on the boosted voltage to be performed with a stable boosted voltage. Techniques for deactivating and reactivating the voltage generator are also disclosed that enable more rapid recovery from deactivation such that subsequent operations can be commenced sooner. Such techniques include storing state information corresponding to the voltage generator when deactivated, where the stored state information is used when reactivating the voltage generator. Stored state information can include a state of a clock signal provided to the voltage generator.
申请公布号 US9361964(B1) 申请公布日期 2016.06.07
申请号 US201615051794 申请日期 2016.02.24
申请人 Everspin Technologies, Inc. 发明人 Gogl Dietmar;Alam Syed M.;Andre Thomas;Lin Halbert S.
分类号 G11C11/00;G11C11/16 主分类号 G11C11/00
代理机构 代理人
主权项 1. A method of providing a boosted voltage on a signal line on a device, comprising: generating a first supply voltage at a node using a voltage generator, wherein magnitude of the first supply voltage is greater than that of a logic supply voltage for the device; detecting a signal transition signaling a beginning of an operation in the device that is sensitive to variations of the boosted voltage; driving the signal line to the boosted voltage using the first supply voltage at the node; while driving the signal line using the first supply voltage at the node, performing the operation in the device that is sensitive to variations of the boosted voltage; while performing the operation, maintaining the voltage generator in a deactivated state; and reactivating the voltage generator when the operation in the device that is sensitive to variations of the boosted voltage is complete.
地址 Chandler AZ US