| 发明名称 |
Deposition Method and Focused Ion Beam System |
| 摘要 |
A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step. |
| 申请公布号 |
US2016163507(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201514956725 |
申请日期 |
2015.12.02 |
| 申请人 |
JEOL Ltd. |
发明人 |
Kadoi Misumi |
| 分类号 |
H01J37/304;C23C14/34 |
主分类号 |
H01J37/304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A deposition method that is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method comprising:
a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step. |
| 地址 |
Tokyo JP |
