Methods of processing semiconductor wafers having silicon carbide power devices thereon

摘要

Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

主权项

1. A method of forming a semiconductor device, comprising:
providing an epitaxial layer on a surface of a substrate, the epitaxial layer having a thickness greater than about 3 microns; providing a semiconductor device at a first surface of the epitaxial layer opposite the substrate; connecting a carrier substrate to the first surface of the epitaxial layer; removing the substrate to expose a second surface of the epitaxial layer opposite the first surface; providing a metal layer on the second surface of the epitaxial layer; and separating the epitaxial layer from the carrier substrate.