| 发明名称 |
DIVIDING LITHOGRAPHY EXPOSURE FIELDS TO IMPROVE SEMICONDUCTOR FABRICATION |
| 摘要 |
In an approach to determine one or more exposure areas in a reticle field and associated lithography process parameters for the one or more exposure areas, the computer receives a semiconductor design and sends the semiconductor design to a design analysis program. Additionally, the computer receives data from the design analysis program. Furthermore, the computer determines one or more exposure areas in the reticle field, and at least one lithography process parameter for each of the one or more exposure areas in the reticle field based, at least in part, on the data from the design analysis program, the semiconductor design, and one or more clustering algorithms associated with the design analysis program. |
| 申请公布号 |
US2016180003(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201414573535 |
申请日期 |
2014.12.17 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Greco Stephen E.;Topaloglu Rasit O. |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A method for determining one or more exposure areas and associated lithography process parameters for the one or more exposure areas in a reticle field, the method comprising:
receiving, using one or more computing devices, a semiconductor design and sending, using one or more computing devices, the semiconductor design to a design analysis program; receiving, using one or more computing devices, data from the design analysis program; and determining, using one or more computing devices, one or more exposure areas in the reticle field, and at least one lithography process parameter for each of the one or more exposure areas in the reticle field based, at least in part, on the data from the design analysis program, the semiconductor design, and one or more clustering algorithms associated with the design analysis program. |
| 地址 |
Armonk NY US |
