发明名称 SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM AND HEATING DEVICE
摘要 PROBLEM TO BE SOLVED: To perform formation of a coating film on a substrate where a pattern is formed on a surface and removal of a surface of the coating film with high uniformity in a face of the substrate by a device having a simple constitution.SOLUTION: A substrate processing method comprises: a coating process of coating a substrate where a pattern is formed on a surface with an application liquid to form a coated film; a film removal process of heating the substrate for decreasing a film thickness by vaporizing a component of the coated film; and a film curing process of heating the substrate for curing the coated film by cross-linking reaction along with the film removal process or after the film removal process, in which the processing is performed in such a manner that the film removal process is performed to make an average film thickness of the cured coated film be equal to or less than 80% of an average film thickness of the coated film before the film removal process.SELECTED DRAWING: Figure 5
申请公布号 JP2016127063(A) 申请公布日期 2016.07.11
申请号 JP20140265051 申请日期 2014.12.26
申请人 TOKYO ELECTRON LTD 发明人 SHIOZAWA TAKAHIRO;UEDA KENICHI
分类号 H01L21/312;H01L21/027;H01L21/31;H01L21/768 主分类号 H01L21/312
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