发明名称 |
SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM AND HEATING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To perform formation of a coating film on a substrate where a pattern is formed on a surface and removal of a surface of the coating film with high uniformity in a face of the substrate by a device having a simple constitution.SOLUTION: A substrate processing method comprises: a coating process of coating a substrate where a pattern is formed on a surface with an application liquid to form a coated film; a film removal process of heating the substrate for decreasing a film thickness by vaporizing a component of the coated film; and a film curing process of heating the substrate for curing the coated film by cross-linking reaction along with the film removal process or after the film removal process, in which the processing is performed in such a manner that the film removal process is performed to make an average film thickness of the cured coated film be equal to or less than 80% of an average film thickness of the coated film before the film removal process.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016127063(A) |
申请公布日期 |
2016.07.11 |
申请号 |
JP20140265051 |
申请日期 |
2014.12.26 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
SHIOZAWA TAKAHIRO;UEDA KENICHI |
分类号 |
H01L21/312;H01L21/027;H01L21/31;H01L21/768 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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