METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To stabilize the deposition rate and the film quality when a film is formed on a substrate.SOLUTION: A method includes the steps of: supplying a gas that at least contains an OH group to a substrate in a processing chamber that is set to a first temperature, and thereby, forming a film on the substrate; changing a temperature in the processing chamber from the first temperature to a second temperature higher than the first temperature; and maintaining the inside of the processing chamber at the second temperature in a state where there is no substrate at least in the processing chamber.SELECTED DRAWING: Figure 1