Semiconductor device and method of manufacturing the same

摘要

A semiconductor device having a substrate including a plurality of external terminals on a rear surface and a plurality of bonding terminals electrically connected to the plurality of external terminals on a front surface, a semiconductor chip mounted on the front surface of the substrate, a surface of the chip including a plurality of bonding pads, a plurality of bonding wires connecting between the plurality of bonding pads or between the plurality of bonding terminals and the plurality of bonding wires respectively, a first sealing layer sealing the front surface of the substrate, the plurality of bonding wires and the semiconductor chip, and a second sealing layer comprised of the same material as the first sealing, the second sealing layer being formed above the first sealing layer.

主权项

1. A semiconductor device comprising:
a substrate including a plurality of external terminals on a rear surface and a plurality of bonding terminals electrically connected to the plurality of external terminals on a front surface; a semiconductor chip having a plurality of bonding pads on a surface of the semiconductor chip and mounted on the front surface; a plurality of bonding wires connecting between the plurality of bonding pads or between the plurality of bonding terminals and the plurality of bonding wires respectively; a first encapsulation layer sealing the front surface of the substrate, the plurality of bonding wires and the semiconductor chip; and a second encapsulation layer formed above the first encapsulation layer and attached to the first encapsulation layer, wherein the second encapsulation layer has a higher thermal conductivity than a thermal conductivity of the first encapsulation layer, and a filler of the first encapsulation layer is silica, and a filler of the second encapsulated layer is aluminum or alumina.