Through silicon via (TSV) process

摘要

A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.

主权项

1. A through silicon via process, comprising:
forming a recess in a substrate; forming a barrier layer to cover the surface of the recess; forming a buffer layer comprising Cobalt (Co) or Ruthenium (Ru) to cover the barrier layer; and forming a conductive layer comprising a seed layer directly contacting the buffer layer and filling the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the barrier layer and the buffer layer.