Semiconductor devices and methods of manufacturing the same

摘要

A method of manufacturing a semiconductor device is disclosed. In the method, a substrate having a first surface and a second surface is provided. The second surface is opposed to the first surface. A via hole is formed to penetrate the substrate from the first surface toward the second surface. The via hole includes a first portion and a second portion. The first portion has a first sidewall which is substantially perpendicular to the first surface. The second portion has a second sidewall which gradually decreases from the first surface toward the second surface, and has a bottom surface that substantially flat. A seed pattern is formed on the first sidewall of the first portion, the second sidewall of the second portion and the bottom surface of the second portion of the via hole. A first thickness (Vt) of the seed pattern on the first sidewall of the first portion is less than a second thickness (VIt) of the seed pattern on the second sidewall of the second portion. A through via is formed to fill the via hole.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a substrate including a first surface and a second surface that is opposed to the first surface; forming a via hole that penetrates the substrate from the first surface toward the second surface, the via hole including a first portion and a second portion, wherein the first portion includes a first sidewall that is substantially perpendicular to the first surface, wherein the second portion includes a second sidewall that decreases from the first surface toward the second surface and a bottom surface that is substantially flat; forming a seed pattern on the first sidewall of the first portion, the second sidewall of the second portion and the bottom surface of the second portion of the via hole, wherein a first thickness (Vt) of the seed pattern on the first sidewall of the first portion is less than a second thickness (VIt) of the seed pattern on the second sidewall of the second portion; and forming a through via that fills the via hole, wherein the bottom surface of the second portion of the via hole includes a peripheral portion adjacent the second sidewall of the second portion and a central portion surrounded by the peripheral portion, and wherein the central portion is more flat than the peripheral portion.