Manufacturing method for semiconductor device

摘要

A gate oxide film is formed in a region having a MOSFET on a semiconductor substrate formed therein, and a first polysilicon film serving as a gate electrode of the MOSFET is further formed. Thereafter, a charge storage three-layer film is formed by opening a region having a MONOS type FET formed therein, exposing a semiconductor surface of the semiconductor substrate, and sequentially depositing a first potential barrier film, a charge storage film, and a second potential barrier film. In this case, before the charge storage three-layer film is formed, an anti-oxidation film is formed on the first polysilicon film.

主权项

1. A method for forming a semiconductor device including a first FET and a second FET, the method comprising:
(d) forming a gate insulating film in a region having the first FET on a semiconductor substrate formed therein; (e) forming a first polysilicon film to which an impurity is added, in the region having the first FET formed therein, after the step (d); (h) forming an anti-oxidation film on the first polysilicon film, after the step (e); (i) exposing a semiconductor surface of the semiconductor substrate in a region having the second FET formed therein, after the step (h); and (m) forming a silicon oxide film on the entire semiconductor surface of the semiconductor device after the step (i), to form at least a portion of a gate insulating film of the second FET on the semiconductor surface exposed in the step (i).