Memory device with multiple voltage generators

摘要

A semiconductor memory device includes multiple voltage generators. The memory device includes a first voltage generator for generating a first internal voltage based on a first power supply voltage, and a second voltage generator for generating a second internal voltage based on a second power supply voltage that is lower than the first power supply voltage. The first internal voltage is used as a driving voltage of a bit line sense amplifier in a core block including a memory cell array. The second internal voltage that is lower than the first internal voltage is used as a driving voltage of a peripheral circuit block other than the core block.

主权项

1. A memory device comprising:
a first voltage generator configured to generate a first internal voltage based on a first power supply voltage; a second voltage generator configured to generate a second internal voltage based on a second power supply voltage that is lower than the first power supply voltage; and a core block including a memory cell array and a bit line sense amplifier configured to sense memory cell data in the memory cell array and amplify the sensed memory cell data, wherein the first internal voltage is used as a driving voltage of the bit line sense amplifier in the core block, and the second internal voltage that is lower than the first internal voltage is used as a driving voltage of a peripheral circuit block other than the core block.