发明名称 |
Gate driving circuit and display apparatus having the same |
摘要 |
A gate driving circuit is provided which includes a plurality of stages cascade-connected with each other and outputting a plurality of gate signals. An n-th (n is a natural number) stage includes a gate output part, a first node control part and a carry part. The gate output part includes a first transistor. The first transistor outputs a high voltage of a clock signal to a high voltage of an n-th gate signal in response to a high voltage of a control node. The first node control part is connected to the control node to control a signal of the control node and includes at least one transistor having a channel longer than the channel length of the first transistor. The carry part outputs the high voltage of the clock signal to an n-th carry signal in response to the signal of the control node. |
申请公布号 |
US9412315(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201213485243 |
申请日期 |
2012.05.31 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kim Beom-Jun;Hur Myung-Koo;Lee Bong-Jun;Moon Yeon-Kyu;Lee Myung-Sub;Kim Gyu-Tae |
分类号 |
G09G3/36;G11C19/28;H03K17/693 |
主分类号 |
G09G3/36 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A gate driving circuit, comprising:
a plurality of stages connected with each other and configured to output a plurality of gate signals, an n-th (n is a natural number) stage comprising: a gate output part comprising a first transistor to provide a high voltage of a clock signal as an n-th gate signal in response to a high voltage of a control node; a carry part to provide the high voltage of the clock signal as an n-th carry signal in response to the high voltage of the control node; and a first node control part connected to the control node to control a signal of the control node, the first node control part comprising:
a ninth transistor that is configured to discharge the signal of the control node in response to an output signal of a first stage after the n-stage, the ninth transistor has a channel length longer than a channel length of the first transistor, wherein the output signal of the first stage is a carry signal provided from a carry part of the first stage. |
地址 |
Yongin-si KR |