| 发明名称 | Vertical cavity surface emmiting laser | ||
| 摘要 | A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time. | ||
| 申请公布号 | US9438010(B1) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201514678414 | 申请日期 | 2015.04.03 |
| 申请人 | SAE Magnetics (H.K.) Ltd. | 发明人 | Padullaparthi Babu Dayal |
| 分类号 | H01S5/00;H01S5/187;H01S5/343;H01S5/34;H01S5/183 | 主分类号 | H01S5/00 |
| 代理机构 | Nixon & Vanderhye PC | 代理人 | Nixon & Vanderhye PC |
| 主权项 | 1. A vertical cavity surface emitting laser (VCSEL), configured to emit a light having about 850 nm wavelength, comprising: an active region which comprises: one or more InxGa1-xAs quantum wells; andtwo or more GaAs1-yPy barriers bonding to the one or more quantum wells; first and second phase matching layers; and two reflecting mirror stacks sandwiching the active region; wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29; and wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers. | ||
| 地址 | Hong Kong CN | ||