发明名称 High frequency circuit device
摘要 A high frequency circuit device that can avoid an occurrence of a stress concentration to a dielectric substrate during a temperature increase caused by a difference in coefficients of linear expansions of a chassis and a metal housing of a high frequency module is provided.
申请公布号 US9467194(B2) 申请公布日期 2016.10.11
申请号 US201414779758 申请日期 2014.03.13
申请人 HITACHI KOKUSAI ELECTRIC, INC. 发明人 Sawada Wataru;Miura Takahiro
分类号 H04B1/40;H01P1/30;H01L23/04;H01L23/00;H01L23/40;H01P5/08;H04B3/52;H04B1/3888;H01L23/66 主分类号 H04B1/40
代理机构 Brundidge & Stanger, P.C. 代理人 Brundidge & Stanger, P.C.
主权项 1. A high frequency circuit device, comprising: a high frequency module; and a waveguide connection metal material configured to attach the high frequency module; wherein the high frequency module includes:a dielectric substrate serving as a transmitter and receiver configured to exchange a high frequency signal with a waveguide, a metal housing including a first penetration hole provided in an inside bottom surface where the dielectric substrate is implemented, and formed with a plurality of flange portions having screw fixing hole portions, and a metal lid body configured to seal the metal housing; wherein the waveguide connection metal material includes: a screw hole configured to fasten the flange portion of the high frequency module with a screw, a second penetration hole formed to have a substantially same shape and size as the first penetration hole to connect with the first penetration hole of the metal housing, anda first groove provided in a vicinity of the screw hole; and wherein the high frequency module is fastened to the metal material with the screw so that the first penetration hole matches the second penetration hole, wherein in response to the first penetration hole and the second penetration hole functioning as a waveguide, the first groove alleviates a stress concentration to the dielectric substrate caused by a thermal expansion of the metal housing during a temperature increase.
地址 Tokyo JP