| 发明名称 | Single-input multiple-output amplifiers with simultaneous multiple gain modes | ||
| 摘要 | A device includes at least one first amplifier circuit configurable to receive and amplify an input radio frequency (RF) signal having a first carrier at a first input signal level and provide a first amplified RF signal, and at least one second amplifier circuit configurable to receive and amplify the input RF signal having a second carrier at a second input signal level and provide a second amplified RF signal, the at least one first amplifier circuit having a first input impedance, the at least one second amplifier circuit having a second input impedance. | ||
| 申请公布号 | US9467104(B2) | 申请公布日期 | 2016.10.11 |
| 申请号 | US201414228437 | 申请日期 | 2014.03.28 |
| 申请人 | Qualcomm Incorporated | 发明人 | Xu Rui;He Allen;Leung Wingching Vincent;Youssef Ahmed Abdel Monem;Abdel Ghany Ehab Ahmed Sobhy;Woo Sang Hyun;Chang Li-Chung |
| 分类号 | H04B1/16;H03F3/193;H03F3/68;H03F1/56;H03F3/189 | 主分类号 | H04B1/16 |
| 代理机构 | Smith Tempel Blaha LLC | 代理人 | Smith Tempel Blaha LLC |
| 主权项 | 1. A device, comprising: at least one first amplifier circuit configurable to receive and amplify an input radio frequency (RF) signal having a first carrier at a first input signal level and provide a first amplified RF signal; at least one second amplifier circuit configurable to receive and amplify the input RF signal having a second carrier at a second input signal level and provide a second amplified RF signal, the at least one first amplifier circuit having a first input impedance, the at least one second amplifier circuit having a second input impedance different from the first input impedance; and a first capacitance located between the at least one first amplifier circuit and the at least one second amplifier circuit, the first capacitance configured to establish at least one of the first input impedance or the second input impedance. | ||
| 地址 | San Diego CA US | ||