发明名称 PIXEL STRUCTURE AND DISPLAY PANEL
摘要 A pixel structure includes a gate line, a first data line, first and second pixel electrodes, first and second active devices, an insulation layer, and first and second connection electrodes. The first and second pixel electrodes are respectively disposed aside a first edge and a second edge of the gate line. The first drain electrode and second drain electrode of the first and second active devices both extend toward the second pixel electrode. The first connection electrode is electrically connected to the first drain electrode through a first contact hole and connected to the first pixel electrode; the first connection electrode and the first data line overlap in the vertical projection direction. The second connection electrode is disposed aside the second edge, and the second connection electrode is connected to the second pixel electrode and electrically connected to the second drain electrode through a second contact hole.
申请公布号 US2016313613(A1) 申请公布日期 2016.10.27
申请号 US201514829652 申请日期 2015.08.19
申请人 AU Optronics Corp. 发明人 Chang Ming-Haw;Chiang Chun-Yi
分类号 G02F1/1343;G02F1/1362;H01L27/12;G02F1/1335;H01L29/417;H01L29/423;G02F1/1368;G02F1/1333 主分类号 G02F1/1343
代理机构 代理人
主权项 1. A pixel structure, comprising: a first substrate; a gate line disposed on the first substrate, wherein the gate line has a first edge and a second edge; a first data line disposed on the first substrate, wherein the first data line intersects the gate line; a first pixel electrode disposed aside the first edge of the gate line; a second pixel electrode disposed aside the second edge of the gate line; a first active device disposed on the first substrate, wherein the first active device comprises: a first gate electrode connected to the gate line;a first semiconductor layer disposed corresponding to the first gate electrode, wherein the first semiconductor layer overlaps at least a portion of the first gate electrode in a vertical projection direction;a first gate insulating layer disposed between the first gate electrode and the first semiconductor layer; anda first source electrode and a first drain electrode respectively disposed at two sides of the first semiconductor layer, wherein the first source electrode is connected to the first data line, and the first drain electrode extends toward the second pixel electrode; a second active device disposed on the first substrate, wherein the second active device comprises: a second gate electrode connected to the gate line;a second semiconductor layer disposed corresponding to the second gate electrode, wherein the second semiconductor layer overlaps at least a portion of the second gate electrode in the vertical projection direction;a second gate insulating layer disposed between the second gate electrode and the second semiconductor layer; anda second source electrode and a second drain electrode respectively disposed at two sides of the second semiconductor layer, wherein the second drain electrode extends toward the second pixel electrode; at least one insulating layer covering the first active device and the second active device, wherein the at least one insulating layer has: a first contact hole exposing the first drain electrode; anda second contact hole exposing the second drain electrode; a first connection electrode having a first end and a second end, wherein the first end of the first connection electrode is electrically connected to the first drain electrode through the first contact hole, the second end of the first connection electrode is electrically connected to the first pixel electrode, the first connection electrode is disposed on the insulating layer, and the first connection electrode overlaps the first data line in the vertical projection direction; and a second connection electrode disposed aside the second edge of the gate line, wherein the second connection electrode is electrically connected to the second pixel electrode, and the second connection electrode is electrically connected to the second drain electrode through the second contact hole.
地址 Hsin-Chu TW