| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of elements by individually setting the thickness of insulating films of a switching element and a photoelectric converting element constituting a pixel. <P>SOLUTION: A photoelectric conversion apparatus includes on a substrate 100 a pixel region wherein pixels each including a photoelectric converting element 101 and a switching element 102 are disposed in a matrix shape. The switching element 102 includes a body structure disposing a gate electrode 205, a first insulating layer 301a, a second insulating layer 302a, and a semiconductor layer 303a in this order from the side of the substrate 100. The photoelectric converting element 101 includes a structure with a lower electrode 201, a second insulating layer 302a, and a semiconductor layer 303a in the order from the side of the substrate 100 disposed in this order on the first insulating layer 301a. <P>COPYRIGHT: (C)2008,JPO&INPIT |
