发明名称 PATTERN STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a pattern structure in which a swelling of an end of a pattern film is suppressed.SOLUTION: A pattern structure 100 comprises a base material 10, and a pattern film 14 formed on a surface 10S of the base material 10 by rupturing the film formed by an atomic layer deposition method. The pattern film 14 comprises an end part 14A including a rapture surface 14R connected to the surface 10S of the base material 10 and an upper surface 14S connected to the rapture surface 14R and extending along the surface 10S of the base material 10.SELECTED DRAWING: Figure 2
申请公布号 JP2016213302(A) 申请公布日期 2016.12.15
申请号 JP20150095088 申请日期 2015.05.07
申请人 MITSUBISHI PENCIL CO LTD 发明人 OKAMOTO KIMIYASU;ITO HIROYUKI;TAKIGAWA SEIICHI
分类号 H01L21/306;H01L21/027 主分类号 H01L21/306
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