| 摘要 |
In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.
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