发明名称 |
Method for the deposition of diamond film by high density direct current glow discharge |
摘要 |
There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300 DEG C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.
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申请公布号 |
US5476693(A) |
申请公布日期 |
1995.12.19 |
申请号 |
US19940348110 |
申请日期 |
1994.11.25 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE, WOOK-SEONG;BAIK, YOUNG-JOON;EUN, KWANG Y. |
分类号 |
C23C16/27;(IPC1-7):B05D3/06;C23C16/26 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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