发明名称 Method for the deposition of diamond film by high density direct current glow discharge
摘要 There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300 DEG C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.
申请公布号 US5476693(A) 申请公布日期 1995.12.19
申请号 US19940348110 申请日期 1994.11.25
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, WOOK-SEONG;BAIK, YOUNG-JOON;EUN, KWANG Y.
分类号 C23C16/27;(IPC1-7):B05D3/06;C23C16/26 主分类号 C23C16/27
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