| 摘要 |
PURPOSE: To obtain high-density plasma of a uniform distribution by radially arranging plural magnetic field coils on the outside wall in the upper part of a reaction chamber and passing AC currents of antiphases to each other in these adjacent magnetic field coils, thereby generating magnetic fields. CONSTITUTION: The plural magnetic field coils 1 are radially arranged along the outside front surface of the upper outside wall 12 of the reaction chamber 2 of a plasma etching device and the ACs of the antiphases are passed to the adjacent magnetic field coils 1. The magnetic fields B generated between the adjacent magnetic field coils 1 are then reversed in directions from each other. The E×B drift of the plasma by the magnetic fields B within the reaction chamber 2 are such that the E×B drift from the center to the outer periphery arises under the part between the certain coils and the E×B drift arises from the outer periphery to the center under the part between the coils adjacent thereto. These drifts are reversed when the coil currents deviate by a half period and, therefore, the plasma is repetitively drifted from the center to the outer periphery and from the outer periphery to the center under the part between the one coil. As a result, the high-density plasma having the uniform distribution is obtd.
|
