发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND MANUFACTURING METHOD THEREOF
摘要 A TFT(Thin Film Transistor) array substrate and a manufacturing method thereof are provided to configure a data signal line in a triple line using gate metal, data metal and ITO(Indium Tin Oxide) metal, thereby reducing signal delay of a data metal line and prevent wavy noise caused by 4 mask processes. A gate line(12b) is formed on a transparent insulating substrate(11) in one direction. A first data line(12b') is electrically separated from the gate line, and formed in a direction vertical to the gate line. A second data line(16c) is arranged as crossing the gate line on the same line as the first data line. A TFT(Thin Film Transistor) is formed in an intersection between the gate line and the second data line. A semiconductor layer(14) is formed in a lower part of a source electrode(16a) and a drain electrode(16b) of the TFT. A third data line(19') is formed by depositing transparent electrode metal on a contact hole passing through the second data line and the semiconductor layer so as to electrically connect the first and second data lines, and defines a pixel area by crossing the gate line. A pixel electrode and a common electrode are formed on the pixel area.
申请公布号 KR20080002268(A) 申请公布日期 2008.01.04
申请号 KR20060060981 申请日期 2006.06.30
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KIM, KYONG SOEK
分类号 G02F1/136 主分类号 G02F1/136
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