CVD TUNGSTEN DEPOSITION ON OXIDE SUBSTRATES

摘要

The present invention discloses a method for depositing a conductor, such as tungsten (W), onto a substrate. The method generally includes depositing an amorphous silicon layer on an oxide substrate and then depositing a conductive film, such as tungsten, thereover. The silicon is believed to provide a nucleation surface for subsequent metal deposition and to provide protection for the substrate from the deleterious effects of the surface reaction between silicon and tungsten hexafluoride.