METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to increase capacitance by maximizing the electrode surface area of the capacitor. CONSTITUTION: A first insulating layer(210) is formed on a semiconductor substrate wherein the insulating layer has a contact plug(212) inside. A second insulating layer is formed on the first insulating layer, and the second insulating layer is etched by using a mask to form a storage electrode. A first conductive layer(218) is formed on the second insulating layer including the first opening. A spacer is formed on both sidewalls of the first opening. A second conductive layer(222) is evaporated on the entire surface of the substrate. The second conductive layer, first conductive layer and the spacer are etched for planarization to expose the first insulating layer. The spacer is eliminated. A HSG(Hemispherical Grain) layer is formed on the first and second conductive layers. The second insulating layer is etched to form a storage electrode.