| 发明名称 |
Electronic devices comprising thin film transistors |
| 摘要 |
The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer (8) of semiconductor material is provided over an insulated gate electrode (2). A negative resist (14) is used to define source and drain electrodes (26,28) which extend over the insulating layer (8) up to the step formed therein adjacent an edge (16A) of the gate electrode (2).
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| 申请公布号 |
US2002168804(A1) |
申请公布日期 |
2002.11.14 |
| 申请号 |
US20020142587 |
申请日期 |
2002.05.09 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONIC N.V. |
发明人 |
VAN DER ZAAG PIETER J.;DEANE STEVEN C.;BATTERSBY STEPHEN J. |
| 分类号 |
H01L51/05;H01L21/336;H01L29/78;H01L29/786;H01L51/40;(IPC1-7):H01L21/335;H01L21/823 |
主分类号 |
H01L51/05 |
| 代理机构 |
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