| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile ferroelectric memory device for compensating the change of property according to positions, by preparing the load conditions different from each other or making the sizes of capacitors different from each other, in accordance with the positions of each cell array in a cell array block. SOLUTION: In the multi-bit structure cell array block of this nonvolatile ferroelectric memory cell array block having a sub bit line and a main bit line and including a plurality of sub cell arrays for inducing a sensing voltage of the main bit line by converting a sensing voltage of the sub bit line into a current, in order to overcome different data properties of the whole sub cell arrays due to delay time differences, etc., by positions of the sub-cell arrays, sensing loads different each other are selectively applied to the main bit line according to the positions of the operating cell arrays, or the different size of the nonvolatile ferroelectric capacitors of the memory cell are formed according to the positions of the sub-cell arrays. As a result, the cell data properties of the whole cell array block are equalized to enable the even distribution. COPYRIGHT: (C)2005,JPO&NCIPI
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