| 摘要 |
A method of manufacturing a semiconductor device includes the step of forming a first insulating section with a protruding section on a semiconductor substrate, the step of forming a first conducting section on the first insulating section so as to pass on a surface of the protruding section, the step of forming a second insulating section for partially covering the first conducting section above the first insulating section so as to expose at least a part of the first conducting section formed on the surface of the protruding section, and the step of forming, on the second insulating section, a second conducting section electrically connected to the first conducting section via an exposed section of the first conducting section exposed from the second insulating section.
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