| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element having a bump structure which reduces external stress to be generated in a manufacturing process of the element, especially, in a rear face polishing process, and less damages an interlayer insulation film which constitutes a circuit, and also to provide its manufacturing method, and a semiconductor device including the semiconductor element and its manufacturing method. <P>SOLUTION: On a semiconductor substrate 1 with an interconnection layer (not illustrated herein) formed thereon, an electrode 2 and a cover coat film 3 having an opening over the electrode 2 are formed in order. On the electrode 2, a conductive resin layer 5 made of a conductive resin which has a flat portion on the surface is formed via a first closely contact layer 4. On the flat portion of the conductive resin layer 5, a pillar-shaped bump 7 made of, for example, copper (Cu) is formed via a second closely contact layer 6. <P>COPYRIGHT: (C)2008,JPO&INPIT |
