Word line divider and storage device

摘要

A word line divider which has a simplified circuit structure and can operate stably is provided. A storage device which has a simplified circuit structure and can operate stably is provided. A transistor whose leakage current is extremely low is connected in series with a portion between a word line and a sub word line so that the word line divider is constituted. The transistor can include an oxide semiconductor for a semiconductor layer in which a channel is formed. Such a word line divider whose circuit structure is simplified is used in the storage device.

主权项

1. A word line divider comprising:
a word line; a first sub word line; a second sub word line; a first transistor; and a second transistor, wherein one of a source and a drain of the first transistor and one of a source and a drain of the second transistor are electrically connected to the word line, wherein the other of the source and the drain of the first transistor is electrically connected to the first sub word line, wherein the other of the source and the drain of the second transistor is electrically connected to the second sub word line, and wherein off-state leakage current per micrometer of channel width of each of the first transistor and the second transistor is 1×10−17 A or lower.