| 摘要 |
An embodiment relates to a control system for a single crystal ingot growth apparatus, which is capable of minimizing a difference between a target pulling speed and an actual pulling speed in a process of growing a single crystal ingot. The control system for a single crystal ingot growth apparatus comprises: an ingot length setting unit which sets a length of a single crystal ingot; a target value setting unit which sets a target diameter, a target pulling speed, and a target temperature based on the length of the single crystal ingot; a pulling speed control unit which generates a calibration pulling speed by comparing the target diameter with an actual diameter of the single crystal ingot being grown in the single crystal ingot growth apparatus, and controls a pulling speed of the single crystal ingot growth apparatus based on the calibration pulling speed; a pulling speed calibration unit which calibrates an average pulling speed, which generates an average of actual pulling speeds for each unit time for a predetermined period before and after a reference time during a process of growing the single crystal ingot, to the target pulling speed; a compensation signal generation unit which generates a compensation signal by comparing the average pulling speed with the target pulling speed; and a temperature control unit which generates a compensation temperature by comparing the compensation signal with the target temperature and an actual temperature, and controls a temperature of the single crystal ingot growth apparatus based on the compensation temperature. |
