摘要 |
PROBLEM TO BE SOLVED: To improve saturation characteristics.SOLUTION: A photodiode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photodiode. A plurality of vertical gate electrodes are formed in a depth direction from a surface of the substrate in a region between the photodiode and the floating diffusion, and an overflow path is formed in a region sandwiched between the plurality of vertical gate electrodes. This technology is applicable to a CMOS image sensor.SELECTED DRAWING: Figure 3 |