发明名称 Organic light emitting diode display device and method of fabricating the same
摘要 In an organic light emitting diode (OLED) display device and a method for fabricating the same, OLED pixels are patterned through a photolithography process, so a large area patterning can be performed and a fine pitch can be obtained, and an organic compound layer can be protected by forming a buffer layer of a metal oxide on an upper portion of the organic compound layer or patterning the organic compound layer by using a cathode as a mask, improving device efficiency. In addition, among red, green, and blue pixels, two pixels are patterned through a lift-off process and the other remaining one is deposited to be formed without patterning, the process can be simplified and efficiency can be increased.
申请公布号 US9425438(B2) 申请公布日期 2016.08.23
申请号 US201514644901 申请日期 2015.03.11
申请人 LG Display Co., Ltd. 发明人 Kim Young-Mi;Yoon Jong-Geun;Heo Joon-Young;Park Han-Sun;Do Eui-Doo;Lee Yeon-Kyeong;Kim Dae-Hyun;Shim Jong-Sik
分类号 H01L51/50;H01L51/56;H01L51/00;H01L51/52;H01L27/32 主分类号 H01L51/50
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method for fabricating an organic light emitting diode (OLED) display device, the method comprising: forming a plurality of first electrodes on a substrate; forming a first hole injection layer, a first hole transport layer, a first light emitting layer, a first electron transport layer, and a first buffer layer in a laminated manner on the substrate through a first photo process including a first etching process; forming a second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, and a second buffer layer in a laminated manner on the substrate through a second photo process including a second etching process; forming a third hole injection layer, a third hole transport layer, a third light emitting layer, a third electron transport layer, and a third buffer layer in a laminated manner on the substrate through a third photo process including a third etching process; and forming a plurality of second electrodes respectively on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are made of a metal oxide.
地址 Seoul KR