Strain inducing semiconductor regions

摘要

A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate.

主权项

1. A semiconductor device, comprising:
a crystalline substrate; and a transistor disposed above the substrate, the transistor comprising: a channel region comprising a SixGe1-x material, the channel region having a top surface and a pair of laterally opposing sidewalls; a gate dielectric layer formed on the top surface of the channel region and adjacent the pair of sidewalls of the channel region; a gate electrode formed on the gate dielectric layer; a pair of gate isolation spacers formed adjacent to the gate electrode; an epitaxially-grown source region disposed laterally and directly adjacent to a first end of the channel region, the source region having a top surface and a pair of laterally opposing sidewall surfaces; and an epitaxially-grown drain region disposed laterally and directly adjacent to a second end of the channel region, the drain region having a top surface and a pair of laterally opposing sidewall surfaces, wherein the source and drain regions comprise a SiyGe1-y material directly adjacent to the channel region comprising the SixGe1-x material, 0