| 发明名称 |
MULTILAYER-STACKED RESISTIVE RANDOM ACCESS MEMORY DEVICE |
| 摘要 |
A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal. |
| 申请公布号 |
US2016240779(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201514736958 |
申请日期 |
2015.06.11 |
| 申请人 |
National Tsing Hua University |
发明人 |
YEW Tri-Rung;HUNG Ying-Chan;WANG Tsang-Hsuan;CHANG Pin |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A multilayer-stacked resistive random access memory device comprising:
first and second electrode layers; a resistive oxide layer which is electrically coupled to said first and second electrode layers, which exhibits resistive switching characteristics, and which includes a first metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; a sulfide layer contacting said resistive oxide layer, disposed between said resistive oxide layer and said first electrode layer, and including a metal sulfide that contains a second metal that is the same as said first metal, and a conductive oxide layer disposed between said resistive oxide layer and said second electrode layer; wherein said sulfide layer cooperates with said resistive oxide layer to form a p-n junction therebetween. |
| 地址 |
Hsinchu City TW |
