NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME

摘要

[Problem] To provide a transparent nitride semiconductor template having a high-quality nitride semiconductor, being suitable for use in an ultraviolet LED, and having electroconductivity, and a manufacturing method allowing simple manufacture of same. [Solution] Provided is a nitride semiconductor template 10 having: a Ga2O3 substrate 11; a buffer layer 12 formed on the Ga2O3 substrate 11 and having AlN as a principal component; a first nitride semiconductor layer 13 formed on the buffer layer 12 and having AlxGa1-xN (0.2 < x ≤ 1) as a principal component; and a second nitride semiconductor layer 14 formed on the first nitride semiconductor layer 13 and having AlyGa1-yN (0.2 ≤ y ≤ 0.55, y < x) as a principal component.