| 发明名称 | Solid-state imaging device, driving method thereof and electronic apparatus | ||
| 摘要 | A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film. | ||
| 申请公布号 | US9438834(B2) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201414465432 | 申请日期 | 2014.08.21 |
| 申请人 | Sony Corporation | 发明人 | Izuha Kyoko;Harada Kouichi |
| 分类号 | H04N5/369;H01L27/146 | 主分类号 | H04N5/369 |
| 代理机构 | Chip Law Group | 代理人 | Chip Law Group |
| 主权项 | 1. A solid-state imaging device comprising: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in at least a portion of the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; an upper electrode which is formed above the electrochromic film; and a voltage applying section which detects an amount of electric charge accumulated in the photoelectric converting section and applies the voltage to the electrochromic film according to the electric charge amount. | ||
| 地址 | Tokyo JP | ||